Evolution of Point Defect structure of CdTe Crystals during laser irradiations, included doping and high energy radiation dose

Abstract

High resistivity CdTe semiconductor is widely used in the production of X-and J-ray detectors. Electrical and spectral properties of CdTe-based devices strongly depend on the nature of point defects in the initial crystals and also on evolution of the semiconductor defect structure during fabrication and operation of detectors. Recently, we have shown that the nanosecond laser procedure can be successfully used for surface processing of CdTe crystals, doping of a thin surface layer and producing diode structures which are sensitive to X- and Ȗ-ray radiation [1-5]. However, the laser action is accompanied by the formation of native point defects, complexes as well as extended defects in the semiconductor. High energy radiation also results in transformation of the point defect structure during detector operation